Fit from datasheet curves
Output, transfer, capacitance and gate-charge curves into one charge-based model.
Device models from the datasheet, with honest bands.
Digitised curves in, a fitted GaN or SiC model out, a virtual double-pulse test, and switching losses with an uncertainty band.
What does the Datasheet Device Models do?
Datasheet Device Models builds a circuit model of a GaN or SiC power transistor from the curves in its datasheet: output and transfer characteristics, capacitances and gate charge. The fit carries its uncertainty, a virtual double-pulse test runs on the fitted model, and the result is a table of turn-on and turn-off energy (Eon, Eoff) versus current and temperature with a band, not a single optimistic number. The models feed the EMI, electro-thermal and converter-design modules. They are vendor-neutral and built only from public datasheet data.
Features
Virtual double-pulse test
The standard switching-loss test run on the fitted model.
Eon / Eoff with bands
Switching energy versus current and temperature, with an uncertainty band.
Vendor-neutral
Any part with a datasheet; no encrypted vendor models needed.
Limits
All device behaviour is estimated. Hard-switched Eon/Eoff typically carries a band of about ±20–30 %; soft-switching Coss hysteresis and GaN dynamic Rds(on) are not modelled.
Every module ships with reference cases that run in our CI. See validation for how results are checked.
Related modules
Electro-thermal: Tj in the loop
Junction temperature of power devices with the loss–temperature loop closed, Foster and Cauer thermal network import, PCB copper spreading and a bounded board thermal resistance.
Conducted-EMI Predictor
Predict the conducted-emission spectrum of a switching converter through a LISN against CISPR 32, CISPR 25 or FCC Part 15.107 limits, with DM/CM split, peak, quasi-peak and average detectors, margin and a first filter.
Converter Designer
From input and output specs to candidate converter topologies, real parts and an efficiency, volume and cost Pareto front with error bands, each design verified by an exact steady-state simulation.
Try the Datasheet Device Models.
Frequently asked questions
What is a double-pulse test?
A double-pulse test switches a transistor twice into an inductive load to measure its turn-on and turn-off energy at a set current and voltage. The module runs it virtually on the fitted model.
How accurate are the switching losses?
They come with an uncertainty band; for hard switching it is typically about ±20–30 %, and the band is shown with every number.